DMN2010UDZ

Document number: DS37730 Rev. 3 - 2

2 of 7

www.diodes.com

May 2015

© Diodes Incorporated

DMN2010UDZ

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

24

V

Gate-Source Voltage

±8

V

Steady

State

11

9

A

Maximum Continuous Body Diode Forward Current (Note 6)

2

A

Pulsed Drain Current (380

s Pulse, Duty Cycle = 1%)

65

A

Avalanche Current (Note 7) L = 0.1mH

34

A

Avalanche Energy (Note 7) L = 0.1mH

57

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

0.7

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

184

°C/W

Total Power Dissipation (Note 6)

1.6

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

78

°C/W

Thermal Resistance, Junction to Case

16.4

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

24

-

-

V

-

-

1.0

μA

Gate-Source Leakage

-

-

±10

μA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

0.3

-

1.5

V

Static Drain-Source On-Resistance

-

-

7

m

Ω

-

7.8

-

8.2

-

9.5

-

10.5

Diode Forward Voltage

-

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

-

2,665

-

pF

f = 1.0MHz

Output Capacitance

-

323

-

pF

Reverse Transfer Capacitance

-

311

-

pF

Gate Resistance

-

1.1

-

Ω

-

33.2

-

nC

Gate-Source Charge

-

3.6

-

nC

Gate-Drain Charge

-

5.6

-

nC

Turn-On Delay Time

-

7.5

-

ns

Turn-On Rise Time

-

20

-

ns

Turn-Off Delay Time

-

93

-

ns

Turn-Off Fall Time

-

49

-

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.