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STWA20N95K5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STWA20N95K5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. November 2013 DocID025573 Rev 1 1/12 STWA20N95K5 N-channel 950 V, 0.275 Ω, 17.5 A SuperMESH™ 5 Power MOSFET in TO-247 long leads package Datasheet - preliminary data Figure 1. Internal schematic diagram Features • Worldwide best FOM (figure of merit) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. 1 2 3 TO-247 long leads D(2) G(1) S(3) AM01476v1 Order codes VDSS RDS(on) max ID PW STWA20N95K5 950 V 0.330 Ω 17.5 A 250 W Table 1. Device summary Order codes Marking Package Packaging STWA20N95K5 20N95K5 TO-247 long leads Tube www.st.com |
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