STWA20N95K5 datasheet(3/12 Pages) STMICROELECTRONICS

3 / 12 page

DocID025573 Rev 1

3/12

STWA20N95K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate- source voltage

± 30

Drain current (continuous) at T

= 25 °C

17.5

Drain current (continuous) at T

= 100 °C

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

TOT

Total dissipation at T

= 25 °C

250

Max current during repetitive or single pulse

avalanche

(pulse width limited by T

jmax

)

Single pulse avalanche energy

(starting T

= 25 °C, I

, V

= 50 V)

200

Gate-source human body model

(R= 1,5 k

Ω, C = 100 pF)

2kV

dv/dt

(2)

≤ 17.5 A, di/dt ≤ 100 A/μs, V

Peak ≤

(BR)DSS

Peak diode recovery voltage slope

V/ns

stg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

0.5

°C/W

Rthj-amb

Thermal resistance junction-amb max

°C/W

STWA20N95K5 Datasheet(PDF) 3 Page - STMicroelectronics

STWA20N95K5 Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL