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STM32F383CC Datasheet(PDF) 58 Page - STMicroelectronics |
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STM32F383CC Datasheet(HTML) 58 Page - STMicroelectronics |
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58 / 125 page ![]() Electrical characteristics STM32F383xx 58/125 DocID023367 Rev 2 6.3.2 Operating conditions at power-up / power-down The parameters given in Table 23 are derived from tests performed under the ambient temperature condition summarized in Table 22. PD Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(4) WLCSP66 376 mW LQFP100 434 LQFP64 444 LQFP48 364 BGA100 338 TA Ambient temperature for 6 suffix version Maximum power dissipation –40 85 °C Low power dissipation(5) –40 105 Ambient temperature for 7 suffix version Maximum power dissipation –40 105 °C Low power dissipation(5) –40 125 TJ Junction temperature range 6 suffix version –40 105 °C 7 suffix version –40 125 1. When the ADC is used, refer to Table 58: ADC characteristics. 2. To sustain a voltage higher than VDD+0.3 V, the internal pull-up/pull-down resistors must be disabled. 3. VDDSD12 is the external power supply for the PB10, and PE7 to PE15 I/O pins (the I/O pin ground is internally connected to VSS). VDDSD3 is the external power supply for PB14 to PB15 and PD8 to PD15 I/O pins (the I/O pin ground is internally connected to VSS). 4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax. 5. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax. Table 22. General operating conditions (continued) Symbol Parameter Conditions Min Max Unit Table 23. Operating conditions at power-up / power-down Symbol Parameter Conditions Min Max Unit tVDD VDD rise time rate 0 ∞ µs/V VDD fall time rate 20 ∞ tVDDA VDDA rise time rate 0 ∞ VDDA fall time rate 20 ∞ |
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