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HLDF35P06 Datasheet(PDF) 1 Page - Shenzhen hui lida electronic co., LTD

Part # HLDF35P06
Description  P-Channel Enhancement Mode Power MOSFET
PDF  5 Pages
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Manufacturer  HUILIDA [Shenzhen hui lida electronic co., LTD]
Direct Link  http://www.hldic.com/
Logo HUILIDA - Shenzhen hui lida electronic co., LTD

HLDF35P06 Datasheet(HTML) 1 Page - Shenzhen hui lida electronic co., LTD

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HLDF35P06
2017 . 202 . V1.0
Page 1
www.hldic.com
Marking and pin assignment
P-Channel MOSFET
P-Channel Enhancement Mode Power MOSFET
Description
The HLDD35P06 uses advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. It can be used in a wide variety of applications.
Application
□ Powerswitchingapplication
□ Hard switched and highfrequencycircuits
□ Uninterruptiblepowersupply
Features
□ VDS =-60V,ID =-35A
□ RDS(ON)<25mΩ@VGS=10V
□ Low gatecharge.
□ Greendeviceavailable.
□ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON).
□ Excellentpackageforgoodheatdissipation.
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-60
V
Gate-Source Voltage
VGS
±20
V
Drain Current-Continuous
ID
-35
A
Drain Current-Continuous(TC=100℃)
ID (100℃)
-27
A
Pulsed Drain Current
IDM
-70
A
Maximum Power Dissipation
PD
52 .1
W
Derating factor
0.87
W/℃
Single pulse avalanche energy
(Note 5)
EAS
162
mJ
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
RθJC
2.4
℃/W


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