HLDF35P06 datasheet(2/5 Pages) HUILIDA

2 / 5 page

HLDF35P06

2017 . 202 . V1.0

Page 2

www.hldic.com

Package Marking and Ordering Information

Part NO.

Marking

Package

HLDF35P06

F35P06

TO-220F

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID

=250μA

-60

Zero Gate Voltage Drain Current

IDSS

VDS=48V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID

=250μA

-1.0

-1.6

-2.5

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=18A

mΩ

VGS=4.5V, ID=12A

Forward Transconductance

gFS

VDS=10V,ID=20A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

VDS=15V,VGS=0V,

F=1.0MHz

3635

Output Capacitance

Coss

224

Reverse Transfer Capacitance

Crss

141

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

VDD=15V,ID=1A,

=3.3Ω

Turn-on Rise Time

23.6

Turn-Off Delay Time

td(off)

100

Turn-Off Fall Time

6.8

Total Gate Charge

VDS=20V,ID=12A

, VGS=4.5V

Gate-Source Charge

Qgs

6.7

Gate-Drain Charge

Qgd

5.5

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=1A

-1

Diode Forward Current

(Note 2)

-35

Reverse Recovery Time

trr

TJ = 25°C, IF = 40A

di/dt = 100A/μs(Note3)

Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating:Pulsewidthlimited bymaximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10se c.

3. Pulse Test: PulseW idth

≤ 300μs, DutyCycle ≤2% .

4. Guaranteed by design, not subject toproduction

5. EAS condition : VDD=-25V,VGS=-10V,L=0.1mH,IAS=-47.6A

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