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S1M8823X01-R0T0 Datasheet(PDF) 11 Page - Samsung semiconductor

Part # S1M8823X01-R0T0
Description  INTERGER RF/IF DUAL PLL
PDF  22 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S1M8823X01-R0T0 Datasheet(HTML) 11 Page - Samsung semiconductor

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INTERGER RF/IF DUAL PLL
S1M8821/22/23
11
ELECTRICAL CHARACTERISTICS (Continued)
(VDD=3.0V, VP=3.0V, Ta =
=== 25°C, Unless otherwise specified)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Charge Pump Outputs : CPoRF, CPoIF
Charge Pump Output
Current
ICP-SRC
VCP=VP/2, ICPo=Low
-1.0
mA
ICP-SINK
VCP=VP/2, ICPo=Low
+1.0
ICP-SRC
VCP=VP/2, ICPo=High
-4.0
ICP-SINK
VCP=VP/2, ICPo=High
+4.0
Charge Pump Leakage
Current
ICPL
0.5V
≤ V
CP ≤ VP-0.5V
-2.5
+2.5
nA
Output Current Sink vs.
Source Mismatch*
ICP-SINK
vs ICP-SRC
VCP=VP/2
3
10
%
Output Current Magnitude
Variation vs. Temperature**
ICP vs T
VCP=VP/2
10
%
Output Current Magnitude
Variation vs. Voltage***
ICP vs VCP
0.5V
≤ V
CP ≤ VP-0.5V
10
15
%
Programmable Divider
Operating
Frequency
S1M8823
finRF
VDD=2.7V to 4.0V
0.5
2.5
GHz
S1M8822
0.2
2.0
S1M8821
0.1
1.2
Operating Frequency
finIF
VDD=3.0V
45
520
MHz
RF Input Sensitivity
PfinRF
VDD=3.0V
-15
0
dBm
VDD=4.0V
-10
0
IF Input Sensitivity
PfinIF
VDD=2.7V to 4.0V
-10
0
dBm
Phase Detector Frequency
fPD
10
MHz
Reference Divider
Operating Frequency
OSCin
5
40
MHz
Input Sensitivity
VOSCin
0.5
VPP



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