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STM32G47PBY3XXX Datasheet(PDF) 122 Page - STMicroelectronics

Part # STM32G47PBY3XXX
Description  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G47PBY3XXX Datasheet(HTML) 122 Page - STMicroelectronics

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Electrical characteristics
STM32G473xB STM32G473xC STM32G473xE
122/229
DS12712 Rev 3
5.3.10
Flash memory characteristics
Table 47. Flash memory characteristics(1)
1. Guaranteed by design.
Symbol
Parameter
Conditions
Typ
Max
Unit
tprog
64-bit programming time
-
81.7
83.35
µs
tprog_row
One row (32 double
word) programming time
Normal programming
2.61
2.7
ms
Fast programming
1.91
1.95
tprog_page
One page (2 Kbytes)
programming time
Normal programming
20.91
21.34
Fast programming
15.29
15.6
tERASE
Page (2 Kbytes) erase
time
-
22.02
24.47
tprog_bank
One bank (256 Kbyte)
programming time
Normal programming
2.68
2.73
s
Fast programming
1.96
2
tME
Mass erase time
(one or two banks)
-
22.13
24.6
ms
IDD
Average consumption
from VDD
Write mode
3.5
-
mA
Erase mode
3.5
-
Maximum current (peak)
Write mode
7 (for 6 µs)
-
Erase mode
7 (for 67 µs)
-
Table 48. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
1. Guaranteed by characterization results.
Unit
NEND
Endurance
TA = -40 to +105 °C
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2. Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
15
1 kcycle(2) at TA = 125 °C
7
10 kcycles(2) at TA = 55 °C
30
10 kcycles(2) at TA = 85 °C
15
10 kcycles(2) at TA = 105 °C
10



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