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STM32G47PBY3XXX Datasheet(PDF) 124 Page - STMicroelectronics

Part # STM32G47PBY3XXX
Description  Arm® Cortex®-M4 32-bit MCUFPU, up to 512 KB Flash, 170 MHz / 213DMIPS, 128 KB SRAM, rich analog, math accelerator
PDF  229 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G47PBY3XXX Datasheet(HTML) 124 Page - STMicroelectronics

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Electrical characteristics
STM32G473xB STM32G473xC STM32G473xE
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DS12712 Rev 3
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
5.3.12
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 50. EMI characteristics
Symbol
Parameter
Conditions
Monitored
frequency band
Max vs. [fHSE/fHCLK]
Unit
8 MHz / 170 MHz
SEMI
Peak level
VDD = 3.6 V, TA = 25 °C,
LQFP128 package
compliant with IEC 61967-2
0.1 MHz to 30 MHz
4
dBµV
30 MHz to 130 MHz
0
130 MHz to 1 GHz
16
1 GHz to 2 GHz
11
EMI Level
3.5
-
Table 51. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic discharge
voltage (human body model)
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-001
2
2000
V
VESD(CDM)
Electrostatic discharge
voltage (charge device model)
TA = +25 °C, conforming to
ANSI/ESDA/JEDEC JS-
002
LQFP100 and
LQFP128
C1
250
V
Other
packages
C2a
500
1. Guaranteed by characterization results.



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