SPC58NH84C3 datasheet(23/147 Pages) STMICROELECTRONICS

23 / 147 page

DS12304 Rev 5

23/147

SPC58EHx, SPC58NHx

Electrical characteristics

VSS_HV_ADR_S-

VSS_HV_ADV

VSS_HV_ADR_S

differential

voltage

—

–25

—

VRAMP_LV

Slew rate on

core power

supply pins

VDD_LV

——

V/ms

VRAMP_HV

Slew rate on

HV power

supply

——

—

100

V/ms

VIN

I/O input

voltage range

—0

—

5.5

IINJ1

Injection

current (per

pin) without

performance

degradation(8)

(9) (10)

Digital pins and

analog pins

–3.0

—

3.0

IINJ2

Dynamic

Injection

current (per

pin) with

performance

degradation(10)

(11)

Digital pins and

analog pins

–10

—

1. The ranges in this table are design targets and actual data may vary in the given range.

2. The PRAM pipeline gasket has to be kept enabled through bit PCM*/BYP_GSKT_XBAR*_TO_PRAMC* to keep system

work at maximum speed; The maximum frequency will go to half if the pipeline gasket is bypassed.

3. Maximum operating frequency is applicable to the cores and platform of the device. See the Clock Chapter in the

Microcontroller Reference Manual for more information on the clock limitations for the various IP blocks on the device.

4. In order to evaluate the actual difference between ambient and junction temperatures in the application, refer to

Section 5.5: Package thermal characteristics

5. Core voltage as measured on device pin to guarantee published silicon performance.

6. Core voltage can exceed 1.26 V with the limitations provided in Section 4.2: Absolute maximum ratings, provided that

HVD134_C monitor reset is disabled.

7. 1.260 V - 1.290 V range allowed periodically for supply with sinusoidal shape and average supply value below or equal to

1.236 V at the given temperature profile.

8. Full device lifetime. I/O and analog input specifications are only valid if the injection current on adjacent pins is within these

limits. See Section 4.2: Absolute maximum ratings for maximum input current for reliability requirements.

9. The I/O pins on the device are clamped to the I/O supply rails for ESD protection. When the voltage of the input pins is

above the supply rail, current will be injected through the clamp diode to the supply rails. For external RC network

calculation, assume typical 0.3 V drop across the active diode. The diode voltage drop varies with temperature.

10. The limits for the sum of all normal and injected currents on all pads within the same supply segment can be found in

Section 4.8.3: I/O pad current specifications

11. Positive and negative Dynamic current injection pulses are allowed up to this limit. See the dedicated chapters for the

different specification limits. See the Absolute Maximum Ratings table for maximum input current for reliability

requirements. Refer to the following pulses definitions: Pulse1 (ISO 7637-2:2011), Pulse 2a (ISO 7637-2:2011 5.6.2), Pulse

3a (ISO 7637-2:2011 5.6.3), Pulse 3b (ISO 7637-2:2011 5.6.3).

Table 5. Operating conditions (continued)

Symbol

Parameter

Conditions

Value(1)

Unit

Min

Typ

Max

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