QPD1025LEVB2 datasheet(7/26 Pages) QORVO

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Data Sheet Rev. L, March 2022

7 of 26

www.qorvo.com

QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

Measured Load-Pull Smith Charts at 65 V 1, 2, 3

Notes:

Test Conditions: VD = 65 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

The performance shown below is for only half of the device out of the two independent amplification paths.

See page 16 for load pull reference planes where the performance was measured.

Measured Load-Pull Smith Charts at 65 V 1, 2, 3

1.0GHz, Load-pull

59.1

58.9

58.7

58.5

58.3

58.1

57.9

57.7

19.9

19.4

69.4

71.4

73.4

75.4

77.4

• Max Power is 59.2dBm

at Z = 2.31+0.392i

 = -0.1238+0.0829i

• Max Gain is 20.3dB

at Z = 1.718+2.043i

 = -0.0709+0.4636i

• Max PAE is 78.5%

at Z = 2.863+2.045i

 = 0.0876+0.3182i

Zo = 3

3dB Compression Referenced to Peak Gain

Zs(fo) = 0.72-1.76i

Zs(2fo) = 0.47+0.06i

Zs(3fo) = 0.81+0.5i

Zl(2fo) = 0.79+0.69i

Zl(3fo) = NaN

Power

Gain

PAE

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