QPD1025LEVB2 datasheet(11/26 Pages) QORVO

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Data Sheet Rev. L, March 2022

11 of 26

www.qorvo.com

QPD1025L

1800 W, 65 V, 0.96

– 1.215GHz, GaN RF Input-Matched Transistor

Notes:

Test Conditions: VD = 50 V, IDQ = 750 mA, 100 us Pulse Width, 10% Duty Cycle, Temp = 25°C.

The performance shown below is for only half of the device out of the two independent amplification paths.

See page 16 for load pull reference planes where the performance was measured.

0.915GHz, Load-pull

58.8

58.6

58.4

57.4

56.8

19.3

18.8

18.3

17.8

17.3

16.8

16.3

78.6

77.6

76.6

74.6

72.6

69.6

66.6

• Max Power is 58.9dBm

at Z = 1.51-0.51i

 = -0.3136-0.1485i

• Max Gain is 19.5dB

at Z = 1.6+1.83i

 = -0.1261+0.448i

• Max DEff is 79.2%

at Z = 1.91+1.44i

 = -0.1252+0.33i

Zo = 3

3dB Compression Referenced to Peak Gain

Zs(1fo) = 0.72-1.74i

Zs(2fo) = 1.65-4.46i

Zs(3fo) = 2.73-0.85i

Zl(2fo) = 1.28+2.73i

Zl(3fo) = 15.18-11.58i

Power

Gain

DEFF

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