LNBH26S datasheet(12/35 Pages) STMICROELECTRONICS

12 / 35 page

Component

Notes

With COMP=0, use 10 µH inductor with ISAT > IPEAK where IPEAK is the boost converter peak current

with COMP=1 and C2 = 22 µF, use 6.8 µH inductor with ISAT > IPEAK where IPEAK is the boost converter

peak current

Figure 7. DiSEqC 2.x application circuit

L1- A

C3 -A

Vin

12 V

LNBOUT -A

LX-A

VUP-A

LNBH26S

D1- A

C2 - A

Vcc

D2-A

Byp

FLT

ADDR

SDA

SCL

ISEL

R1 (RSEL)

LX- B

D1-B

C2 -B C3-B

L1-B

LNBOUT -B

C5 - B

DSQOUT-A

DiSEqC

Envelope

TTL

DiSEqC

22KHz

TTL

DSQIN -A

DSQIN-B

Tone enable control

VUP-B

VOUT-B

BPSW -B

DSQOUT-B

D2- B

VOUT-A

C5 - A

BPSW-A

L2- A

TR1- A

4.7 k

DETIN-A

C6 -A

L2 -B

TR1 -B

DETIN-B

C6 -B

4.7 k

Open drains

to µcontroller

{

I 2C Bus

P-GND

A-GND

D3- A

D3 -B

10 k

4.7k

4.7 k

10 k

(optional)

GIPG2801151323LM

Table 5. LNBH26S DiSEqC 2.x bill of material

Component

Notes

R1 (RSEL)

SMD resistor. Refer to Table 12. A/B section electrical characteristics and ISEL pin description in Table

1. Pin description.

> 25 V electrolytic capacitor, 100 µF or higher is suitable

> 25 V ceramic capacitor, 10 µF or higher is suitable

With COMP = 0, > 25 V electrolytic capacitor, 100 µF or higher is suitable

with COMP = 1, > 35 V ceramic capacitor, 22 µF (or 2 x 10 µF) or higher is suitable

From 470 nF to 2.2 µF ceramic capacitor placed as close as possible to VUP pins. Higher values allow

lower DC-DC noise

From 100 nF to 220 nF ceramic capacitor placed as close as possible to VOUT pins. Higher values allow

lower DC-DC noise

C4, C7

220 nF ceramic capacitors. To be placed as close as possible to VOUT pin

STPS130A or similar Schottky diode

LNBH26S

Typical application circuits

DS8975 - Rev 5

page 12/35

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