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LNBH26S Datasheet(PDF) 13 Page - STMicroelectronics |
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LNBH26S Datasheet(HTML) 13 Page - STMicroelectronics |
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13 / 35 page ![]() Component Notes D2 1N4001-07, S1A-S1M, or any similar general purpose rectifier D3 BAT54, BAT43, 1N5818, or any low power Schottky diode with IF(AV) > 0.2 A, VRRM > 25 V, VF < 0.5 V. To be placed as close as possible to VOUT pin L1 With COMP=0, use 10 µH inductor with ISAT > IPEAK where IPEAK is the boost converter peak current or with COMP=1 and C2 = 22 µF, use 6.8 µH inductor with ISAT > IPEAK where IPEAK is the boost converter peak current L2 220 µH - 270 µH inductor as per DiSEqC 2.x specification TR1 MMBTA92, 2STR2160 or any low power PNP with IC > 250 mA, VCE > 30 V, can be used Also any small power PMOS with ID > 250 mA, RDS(on) < 0.5 W, VDS > 20 V, can be used LNBH26S Typical application circuits DS8975 - Rev 5 page 13/35 |
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