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STM32W108CB Datasheet(PDF) 254 Page - STMicroelectronics |
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STM32W108CB Datasheet(HTML) 254 Page - STMicroelectronics |
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254 / 278 page ![]() Electrical characteristics STM32W108HB STM32W108CC STM32W108CB STM32W108CZ 254/278 Doc ID 16252 Rev 14 14.7 DC electrical characteristics Table 64. DC electrical characteristics Parameter Conditions Min. Typ. Max. Unit Regulator input voltage (VDD_PADS) 2.1–3.6 V Power supply range (VDD_MEM) Regulator output or external input 1.7 1.8 1.9 V Power supply range (VDD_CORE) Regulator output 1.18 1.25 1.32 V Deep sleep current(1) Quiescent current, internal RC oscillator disabled -40°C, VDD_PADS = 3.6 V –0.4 – µA +25°C, VDD_PADS = 3.6 V –0.4 – µA +85°C, VDD_PADS = 3.6 V –1.2 – µA +105°C, VDD_PADS = 3.6 V –2.5 – µA Quiescent current, including internal RC oscillator -40°C, VDD_PADS = 3.6 V –0.7 – µA +25°C, VDD_PADS = 3.6 V –0.7 1.0 µA +85°C, VDD_PADS = 3.6 V –1.5 – µA +105°C, VDD_PADS = 3.6 V –2.9 5.5 µA Quiescent current, including 32.768 kHz oscillator -40°C, VDD_PADS = 3.6 V –0.8 – µA +25°C, VDD_PADS = 3.6 V –1.0 – µA +85°C, VDD_PADS = 3.6 V –2.1 – µA +105°C, VDD_PADS = 3.6 V –3.5 – µA Quiescent current, including internal RC oscillator and 32.768 kHz oscillator -40°C, VDD_PADS = 3.6 V –1.1 – µA +25°C, VDD_PADS = 3.6 V –1.3 – µA +85°C, VDD_PADS = 3.6 V –2.5 – µA +105°C, VDD_PADS = 3.6 V –3.9 – µA Simulated deep sleep (debug mode) current With no debugger activity –300 – µA Reset current Quiescent current, NRST asserted Typ at 25°C/3 V Max at 85°C/3.6 V –1.2 2.0 mA Processor and peripheral currents ARM® Cortex-M3, RAM, and Flash memory 25 °C, 1.8 V memory and 1.25 V core ARM® Cortex-M3 running at 12 MHz from crystal oscillator Radio and all peripherals off –6.0 – mA |
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