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STM32H7 Datasheet(PDF) 353 Page - STMicroelectronics

Part # STM32H7
Description  32-bit Arm® Cortex®-M7 480MHz MCUs, up to 2MB flash, up to 1MB RAM, 46 com. and analog interfaces
PDF  357 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H7 Datasheet(HTML) 353 Page - STMicroelectronics

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DS12110 Rev 10
353/357
STM32H742xI/G STM32H743xI/G
Revision history
356
24-Apr-2019
7
Updated Figure 1: STM32H742xI/G block diagram
Updated Figure 2: STM32H743xI/G block diagram
Updated Table 9: Pin/ball definition.
Updated Table 10 to Table 20 (alternate functions).
Updated Table 39: Peripheral current consumption in Run mode.
Updated Table 137: Peripheral current consumption in Run mode.
Updated Table 184: ADC characteristics.
Updated Table 185: Minimum sampling time vs RAIN.
Updated Table 186: ADC accuracy.
02-Mar-2021
8
Added reference to errata sheet ES0392 in Section 1: Introduction.
Added connection between SDMMC2 and D2-to-D3 AHB bus in Figure 4:
STM32H743xI/G bus matrix.
Updated Section 3.27: True random number generator (RNG).
Added Full-duplex mode in Section 3.33: Serial peripheral interfaces (SPI)/integrated
interchip sound interfaces (I2S).
In Table 2: STM32H742xI/G and STM32H743xI/G features and peripheral counts, split
number of ADC channels into Direct, Fast and Slow channels; and added number of
wakeup and tamper pins.
Updated J1 and F2 signals in Figure 12: TFBGA240+25 ballout
Section 6: Electrical characteristics (rev Y):
– Updated Section 6.2: Absolute maximum ratings introduction to device mission
profile.
– Added a 1 μF capacitor between VDD33USB and ground in Figure 15: Power supply
scheme.
– Power dissipation (PD) removed from Table 24: General operating conditions since
this parameter is redundant with
ΘJA thermal resistance.
– Table 53: Flash memory programming: removed reference to single bank
configuration in title and added tERASE128KB typical and maximum values.
– Added reference to AN4899 in Section 6.3.15: I/O port characteristics. Updated notes
in Table 64: Output timing characteristics (HSLV ON).
– Updated tsu(DV-CLKH)/th(DV-CLKH) and tsu(NWAIT-CLKH)/th(NWAIT-CLKH) in Table 74:
Synchronous multiplexed NOR/PSRAM read timings. Changed t(NWAIT-CLKH) to
tsu(NWAIT-CLKH) and updated tsu(DV-CLKH)/th(DV-CLKH) and tsu(NWAIT-CLKH)/th(NWAIT-CLKH)
in Table 76: Synchronous non-multiplexed NOR/PSRAM read timings. Updated
tsu(SDCLKH _Data) and th(SDCLKH _Data) in Table 80: SDRAM read timings and Table 81:
LPSDR SDRAM read timings.
– Updated ts(IN) and th(IN) in Table 84: QUADSPI characteristics in SDR mode and
tsr(IN)/tsf(IN) and thr(IN)/thf(IN) in Table 85: QUADSPI characteristics in DDR mode.
– Updated maximum sampling time (tS) value in Table 87: ADC characteristics.
Specified that Figure 40: ADC accuracy characteristics is an example for 12-bit
resolution.
– Updated DuCyCKOUT in Table 100: DFSDM measured timing - 1.62-3.6 V.
– Updated tsu(MI) and th(MI) minimum values in Table 106: SPI dynamic characteristics.
– Updated tISU, tIH, tISUDand tIHD in Table 110: Dynamic characteristics: SD / MMC
characteristics, VDD = 2.7 to 3.6 V
– Updated tISU, tIH in Table 111: Dynamic characteristics: eMMC characteristics,
VDD = 1.71 to 1.9 V.
– Updated DuCyCKOUT in Table 100: DFSDM measured timing - 1.62-3.6 V.
Table 231. Document revision history
Date
Revision
Changes



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