MPXY8300 datasheet(21/164 Pages) FREESCALE

21 / 164 page

MPXY8300 Series

Sensors

Freescale Semiconductor

A strictly monitored procedure must be obeyed or the command will not be accepted. This minimizes the possibility of any

unintended changes to the FLASH memory contents. The command complete flag (FCCF) indicates when a command is

complete. The command sequence must be completed by clearing FCBEF to launch the command. Figure 4-2 is a flowchart for

executing all of the commands except for burst programming. The FCDIV register must be initialized before using any FLASH

commands. This must be done only once following a reset.

Figure 4-2 FLASH Program and Erase Flowchart

4.6.4

Burst Program Execution

The burst program command is used to program sequential bytes of data in less time than would be required using the standard

program command. This is possible because the high voltage to the FLASH array does not need to be disabled between program

operations. Ordinarily, when a program or erase command is issued, an internal charge pump associated with the FLASH

memory must be enabled to supply high voltage to the array. Upon completion of the command, the charge pump is turned off.

When a burst program command is issued, the charge pump is enabled and then remains enabled after completion of the burst

program operation if these two conditions are met:

•

The next burst program command has been queued before the current program operation has completed.

•

The next sequential address selects a byte on the same physical row as the current byte being programmed. A row of

FLASH memory consists of 64 bytes. A byte within a row is selected by addresses A5 through A0. A new row begins

when addresses A5 through A0 are all zero.

The first byte of a series of sequential bytes being programmed in burst mode will take the same amount of time to program as

a byte programmed in standard mode. Subsequent bytes will program in the burst program time provided that the conditions

above are met. In the case the next sequential address is the beginning of a new row, the program time for that byte will be the

standard time instead of the burst time. This is because the high voltage to the array must be disabled and then enabled again.

If a new burst command has not been queued before the current command completes, then the charge pump will be disabled

and high voltage removed from the array.

START

WRITE TO FLASH

TO BUFFER ADDRESS AND DATA

WRITE COMMAND TO FCMD

YES

FPVIOL OR

WRITE 1 TO FCBEF

TO LAUNCH COMMAND

AND CLEAR FCBEF (Note 2)

FCCF?

ERROR EXIT

DONE

Note 2: Wait at least four bus cycles

FACCERR?

CLEAR ERROR

FACCERR?

WRITE TO FCDIV (Note 1)

Note 1: Required only once after reset.

before checking FCBEF or FCCF.

FLASH PROGRAM AND

ERASE FLOW

MPXY8300 Datasheet(PDF) 21 Page - Freescale Semiconductor, Inc

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