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AM41PDS3228DB10IS Datasheet(PDF) 35 Page - Advanced Micro Devices

Part # AM41PDS3228DB10IS
Description  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
PDF  59 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM41PDS3228DB10IS Datasheet(HTML) 35 Page - Advanced Micro Devices

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34
Am41PDS3228D
May 13, 2002
P R E L IMINARY
Note: Typical values measured at V
CC = 2.0 V, TA = 25°C. Not 100% tested.
SRAM DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Leakage Current
V
IN = VSS to VCC
–1.0
1.0
µA
ILO
Output Leakage Current
CE1#s = VIH, CE2s = VIL or OE# =
VIH or WE# = VIL, VIO= VSS to VCC
–1.0
1.0
µA
I
CC
Operating Power Supply Current
I
IO = 0 mA, CE1#s = VIL, CE2s =
WE# = V
IH, VIN = VIH or VIL
2mA
I
CC1s
Average Operating Current
Cycle time = 1 µs, 100% duty,
I
IO = 0 mA, CE1#s ≤ 0.2 V,
CE2
≥ V
CC – 0.2 V, VIN ≤ 0.2 V or
VIN ≥ VCC – 0.2 V
2mA
I
CC2s
Average Operating Current
Cycle time = Min., I
IO = 0 mA,
100% duty, CE1#s = V
IL, CE2s =
V
IH, VIN = VIL = or VIH
17
mA
VOL
Output Low Voltage
IOL = 0.1 mA
0.2
V
V
OH
Output High Voltage
I
OH = –0.1 mA
1.4
V
I
SB1
Standby Current (CMOS)
CE1#s
≥ V
CC – 0.2 V, CE2 ≥ VCC –
0.2 V (CE1#s controlled) or CE2
≤
0.2 V (CE2s controlled), CIOs =
V
SS or VCC, Other input = 0 ~ VCC
0.5
8
µA



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