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AM41PDS3228DB10IS Datasheet(PDF) 51 Page - Advanced Micro Devices |
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AM41PDS3228DB10IS Datasheet(HTML) 51 Page - Advanced Micro Devices |
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51 / 59 page ![]() 50 Am41PDS3228D May 13, 2002 P R E L IMINARY SRAM AC CHARACTERISTICS Read Cycle Note: CE1#s = OE# = V IL, CE2s = WE# = VIH, UB#s and/or LB#s = VIL Figure 28. SRAM Read Cycle—Address Controlled Parameter Symbol Description 10, 11 Unit tRC Read Cycle Time Min 70 ns t AA Address Access Time Max 70 ns tCO1, tCO2 Chip Enable to Output Max 70 ns t OE Output Enable Access Time Max 35 ns tBA LB#s, UB#s to Access Time Max 70 ns t LZ1, tLZ2 Chip Enable (CE1#s Low and CE2s High) to Low-Z Output Min 10 ns tBLZ UB#, LB# Enable to Low-Z Output Min 10 ns t OLZ Output Enable to Low-Z Output Min 5 ns tHZ1, tHZ2 Chip Disable to High-Z Output Max 25 ns t BHZ UB#s, LB#s Disable to High-Z Output Max 25 ns tOHZ Output Disable to High-Z Output Max 25 ns t OH Output Data Hold from Address Change Min 10 ns Address Data Out Previous Data Valid Data Valid tAA tRC tOH |
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