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M58LT256JST Datasheet(PDF) 50 Page - STMicroelectronics

Part # M58LT256JST
Description  256 Mbit (16 Mb 횞 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
PDF  106 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M58LT256JST Datasheet(HTML) 50 Page - STMicroelectronics

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Program and Erase times and endurance cycles
M58LT256JST, M58LT256JSB
50/106
10
Program and Erase times and endurance cycles
The Program and Erase times and the number of Program/ Erase cycles per block are
shown in Table 16. Exact Erase times may change depending on the memory array
condition. The best case is when all the bits in the block are at ‘0’ (pre-programmed). The
worst case is when all the bits in the block are at ‘1’ (not pre-programmed). Usually, the
system overhead is negligible with respect to the Erase time. In the M58LT256JST/B the
maximum number of Program/Erase cycles depends on the VPP voltage supply used.
Table 16.
Program/Erase times and endurance cycles(1), (2)
Parameter
Condition
Min
Typ
Typical after
100 kW/E
cycles
Max
Unit
Erase
Parameter Block (16 kword)
0.4
1
2.5
s
Main Block
(64 kword)
Pre-programmed
1
3
4
s
Not pre-programmed
1.2
4
s
Program(3)
Single word
Word Program
80
400
µs
Buffer Program
80
400
µs
Buffer (32 words) (Buffer Program)
300
1200
µs
Main block (64 kword)
600
ms
Suspend Latency
Program
20
25
µs
Erase
20
25
µs
Program/Erase
Cycles (per Block)
Main blocks
100,000
cycles
Parameter Blocks
100,000
cycles
Erase
Parameter Block (16 kword)
0.4
2.5
s
Main Block (64 kword)
1
4
s
Program(3)
Single word
Word Program
80
400
µs
Buffer Enhanced Factory
Program(4)
5400
µs
Buffer (32
words)
Buffer Program
180
1200
µs
Buffer Enhanced Factory Program
150
1000
µs
Main Block
(64 kwords)
Buffer Program
360
ms
Buffer Enhanced Factory Program
300
ms
Bank (16
Mbits)
Buffer Program
5.8
s
Buffer Enhanced Factory Program
4.8
s
Program/Erase
Cycles (per Block)
Main blocks
1000
cycles
Parameter Blocks
2500
cycles
Blank Check
Main blocks
2
ms
Parameter Blocks
0.5
ms
1.
TA = –25 to 85 °C; VDD = 1.7 V to 2 V; VDDQ = 1.7 V to 3.6 V.
2.
Values are liable to change with the external system-level overhead (command sequence and Status Register polling
execution).
3.
Excludes the time needed to execute the command sequence.
4.
This is an average value on the entire device.



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