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M65KG512AB Datasheet(PDF) 52 Page - STMicroelectronics |
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M65KG512AB Datasheet(HTML) 52 Page - STMicroelectronics |
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52 / 54 page ![]() Part numbering M65KG526AB 52/54 8 Part numbering For a list of available options (Speed, Package, etc.) or for further information on any aspect of this device, please contact the ST Sales Office nearest to you. Table 18. Ordering Information Scheme Example: M65KG512AB 8 W 8 Device Type M65 = Low-Power SDRAM Architecture K = Bare Die Operating Voltage G = VDD = VDDQ = 1.8 V, DDR LPSDRAM, x16 Array Organization 512 = 4 Banks x 8 Mbit x 16 Number of Chip Enable Inputs A = One Chip Enable Die Version B = B-Die Speed 8 = 7.5ns (Clock frequency 133 MHz) 6 = 6.0ns (Clock frequency 166 MHz) Delivery Form W = Wafer form Temperature Range 8 = −30 to 85 °C(1) 1. Only available with speed class 133 MHz. 9 = −30 to 105 °C |
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