Internet Data Sheet

Rev. 1.0, 2006-12

14

11032006-VX0M-M6IH

HYS72T512341H[H/J/K]P-[3.7/5]-B

Registered DDR2 SDRAM Modules

3.2

D.C. Characteristics

TABLE 10

Operating Conditions

TABLE 11

Supply Voltage Levels and DC Operating Conditions

Parameter

Symbol

Values

Unit

Note

Min.

Max.

Operating temperature (ambient)

T

OPR

0+65

°C

DRAM Case Temperature

T

CASE

0+90

°C

1)2)3)4)

1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.

2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported

3) Above 80 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to

t

4) When operating this product in the 85 °C to 95 °C

T

setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of

I

Storage Temperature

T

STG

– 50

+100

°C

Barometric Pressure (operating & storage)

PBar

+69

+105

kPa

5)

5) Up to 3000 m.

Operating Humidity (relative)

H

OPR

10

90

%

Parameter

Symbol

Values

Unit

Note

Min.

Typ.

Max.

Device Supply Voltage

V

DD

1.7

1.8

1.9

V

Output Supply Voltage

V

DDQ

1.7

1.8

1.9

V

1)

1) Under all conditions,

V

Input Reference Voltage

V

REF

0.49

DDQ

0.5

DDQ

0.51

DDQ

V

2)

2) Peak to peak AC noise on

V

SPD Supply Voltage

V

DDSPD

1.7

—

3.6

V

DC Input Logic High

V

IH(DC)

V

—

V

V

DC Input Logic Low

V

– 0.30

—

V

V

In / Output Leakage Current

I

L

– 5

—

5

µA

3)

3) Input voltage for any connector pin under test of 0 V