LMH6583

www.ti.com

SNOSAP5E – APRIL 2006 – REVISED MARCH 2013

Operating Ratings

(1)

Temperature Range (2)

−40°C to +85°C

Supply Voltage Range

±3V to ±5.5V

Thermal Resistance

θJA

θJC

64–Pin Exposed Pad HTQFP

27°C/W

0.82°C/W

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for

which the device is intended to be functional, but specific performance is not ensured. For ensured specifications, see ±3.3V Electrical

Characteristics and ±5V Electrical Characteristics.

(2)

The maximum power dissipation is a function of TJ(MAX)and θJA. The maximum allowable power dissipation at any ambient temperature

is PD = (TJ(MAX) – TA)/ θJA. All numbers apply for packages soldered directly onto a PC Board.

±3.3V Electrical Characteristics

(1)

Unless otherwise specified, typical conditions are: TA = 25°C, AV = +2, VS = ±3.3V, RL = 100Ω; Boldface limits apply at the

temperature extremes.

Symbol

Parameter

Conditions

Min (2)

Typ (3)

Max (2)

Units

Frequency Domain Performance

SSBW

−3 dB Bandwidth

VOUT = 0.5 VPP

425

LSBW

VOUT = 2 VPP, RL = 1 kΩ

500

MHz

VOUT = 2 VPP, RL = 150Ω

450

GF

0.1 dB Gain Flatness

VOUT = 2 VPP, RL = 150Ω

80

MHz

DG

Differential Gain

RL = 150Ω, 3.58 MHz/ 4.43 MHz

0.05

%

DP

Differential Phase

RL = 150Ω, 3.58 MHz/ 4.43 MHz

0.05

deg

Time Domain Response

tr

Rise Time

2V Step, 10% to 90%

1.7

ns

tf

Fall Time

2V Step, 10% to 90%

1.4

ns

OS

Overshoot

2V Step

4

%

SR

Slew Rate

4 VPP, 40% to 60%

(4)

1700

V/µs

ts

Settling Time

2V Step, VOUT within 0.5%

9

ns

Distortion And Noise Response

HD2

2nd Harmonic Distortion

2 VPP, 10 MHz

−76

dBc

HD3

3rd Harmonic Distortion

2 VPP, 10 MHz

−76

dBc

en

Input Referred Voltage Noise

>1 MHz

12

nV/

√Hz

in

Input Referred Noise Current

>1 MHz

2

pA/

√Hz

Switching Time

16

ns

XTLK

Crosstalk

All Hostile, f = 100 MHz

−45

dBc

ISOL

Off Isolation

f = 100 MHz

−60

dBc

Static, DC Performance

AV

Gain

1.986

2.00

2.014

VOS

Output Offset Voltage

±3

±17

mV

TCVOS

Output Offset Voltage Average Drift

(5)

38

µV/°C

IB

Input Bias Current

Non-Inverting (6)

−5

µA

TCIB

Input Bias Current Average Drift

Non-Inverting (5)

-12

nA/°C

VO

Output Voltage Range

RL = 100Ω

±1.75

±2.1

V

(1)

Electrical Table values apply only for factory testing conditions at the temperature indicated. No ensurance of parametric performance is

indicated in the electrical tables under conditions different than those tested.

(2)

Room Temperature limits are 100% production tested at 25°C. Device self heating results in TJ ≥ TA, however, test time is insufficient for

TJto reach steady state conditions. Limits over the operating temperature range are ensured through correlation using Statistical Quality

Control (SQC) methods.

(3)

Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary

over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped

production material.

(4)

Slew Rate is the average of the rising and falling edges.

(5)

Drift determined by dividing the change in parameter at temperature extremes by the total temperature change.

(6)

Negative input current implies current flowing out of the device.

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