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MB85R4M2T Datasheet(PDF) 3 Page - RAMXEED LIMITED |
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MB85R4M2T Datasheet(HTML) 3 Page - RAMXEED LIMITED |
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3 / 25 page ![]() DS501-00024-6v1-E 3 MB85R4M2T PIN DESCRIPTIONS Pin Number Pin Name Functional Description 1 to 5, 18 to 22, 23 to 27, 42 to 44 A0 to A17 Address Input pins Select 262,144 words in FeRAM memory array by 18 Address Input pins. When these address inputs are changed during /CE equals to “L” level, reading operation of data selected in the address after transition will start. 7 to 10, 13 to 16, 29 to 32, 35 to 38 I/O0 to I/O15 Data Input/Output pins These are 16 bits bidirectional pins for reading and writing. 6 /CE Chip Enable Input pin In case the /CE equals to “L” level and /ZZ equals to “H” level, device is activated and enables to start memory access. In writing operation, input data from I/O pins are latched at the rising edge of /CE and written to FeRAM memory array. 17 /WE Write Enable Input pin Writing operation starts at the falling edge of /WE. Input data from I/O pins are latched at the rising edge of /WE and written to FeRAM memory array. 41 /OE Output Enable Input pin When the /OE is “L” level, valid data are output to data bus. When the /OE is “H” level, all I/O pins become high impedance (High-Z) state. 28 /ZZ Sleep Mode Input pin When the /ZZ becomes to “L” level, device transits to the Sleep Mode. During reading and writing operation, /ZZ pin shall be hold “H” level. 39, 40 /LB, /UB Lower/Upper byte Control Input pins In case /LB or /UB equals to “L” level, it enables reading/writing operation of I/O0 to I/O7 or I/O8 to I/O15 respectively. In case /LB and /UB equal to “H” level, all I/O pins become High-Z state. 11, 33 VDD Supply Voltage pins Connect all two pins to the power supply. 12, 34 VSS Ground pins Connect all two pins to ground. Note: Please refer to the timing diagram for functional description of each pin. |
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