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MB85R4M2T Datasheet(PDF) 3 Page - RAMXEED LIMITED

Part # MB85R4M2T
Description  4 M (256 K × 16) Bit
PDF  25 Pages
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Manufacturer  RAMXEED [RAMXEED LIMITED]
Direct Link  https://www.ramxeed.com/
Logo RAMXEED - RAMXEED LIMITED

MB85R4M2T Datasheet(HTML) 3 Page - RAMXEED LIMITED

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DS501-00024-6v1-E
3
MB85R4M2T
PIN DESCRIPTIONS
Pin Number
Pin Name
Functional Description
1 to 5, 18 to 22,
23 to 27, 42 to 44
A0 to A17
Address Input pins
Select 262,144 words in FeRAM memory array by 18 Address
Input pins. When these address inputs are changed during /CE
equals to “L” level, reading operation of data selected in the
address after transition will start.
7 to 10, 13 to 16,
29 to 32, 35 to 38
I/O0 to I/O15
Data Input/Output pins
These are 16 bits bidirectional pins for reading and writing.
6
/CE
Chip Enable Input pin
In case the /CE equals to “L” level and /ZZ equals to “H” level,
device is activated and enables to start memory access.
In writing operation, input data from I/O pins are latched at the
rising edge of /CE and written to FeRAM memory array.
17
/WE
Write Enable Input pin
Writing operation starts at the falling edge of /WE.
Input data from I/O pins are latched at the rising edge of /WE
and written to FeRAM memory array.
41
/OE
Output Enable Input pin
When the /OE is “L” level, valid data are output to data bus.
When the /OE is “H” level, all I/O pins become high impedance
(High-Z) state.
28
/ZZ
Sleep Mode Input pin
When the /ZZ becomes to “L” level, device transits to the Sleep
Mode.
During reading and writing operation, /ZZ pin shall be hold “H”
level.
39, 40
/LB, /UB
Lower/Upper byte Control Input pins
In case /LB or /UB equals to “L” level, it enables
reading/writing operation of I/O0 to I/O7 or I/O8 to I/O15
respectively. In case /LB and /UB equal to “H” level, all I/O
pins become High-Z state.
11, 33
VDD
Supply Voltage pins
Connect all two pins to the power supply.
12, 34
VSS
Ground pins
Connect all two pins to ground.
Note: Please refer to the timing diagram for functional description of each pin.



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