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MB85R4M2T Datasheet(PDF) 8 Page - RAMXEED LIMITED |
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MB85R4M2T Datasheet(HTML) 8 Page - RAMXEED LIMITED |
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8 / 25 page ![]() 8 DS501-00024-6v1-E MB85R4M2T 2. AC Characteristics ・ AC Test Conditions Power Supply Voltage : 1.8 V to 3.6 V Operation Ambient Temperature : − 40 °C to + 85 °C Input Voltage Amplitude : 0 V / VDD Input Rising Time : 3 ns Input Falling Time : 3 ns Input Evaluation Level : VDD/2 Output Evaluation Level : VDD/2 Output Load Capacitance : 30 pF (1) Read Cycle Parameter Symbol Value (VDD=1.8V to 2.7V) Value (VDD=2.7V to 3.6V) Unit Min Max Min Max Read Cycle time tRC 185 ― 150 ― ns /CE Access Time tCE ― 95 ― 75 ns Address Access Time tAA ― 185 ― 150 ns /CE Output Data Hold time tOH 0 ― 0 ― ns Address Access Output Output Data Hold time tOAH 20 ― 20 ― ns /CE Active Time tCA 95 ― 75 ― ns Pre-charge Time tPC 90 ― 75 ― ns /LB, /UB Access Time tBA ― 35 ― 20 ns Address Setup Time tAS 0 ― 0 ― ns Address Hold Time tAH 95 ― 75 ― ns /CE↑ to Address Transition time*1 tCAH 0 ― 0 ― ns /OE Access Time tOE ― 35 ― 20 ns /CE Output Floating Time*1 tHZ ― 10 ― 10 ns /OE Output Floating Time tOHZ ― 10 ― 10 ns /LB, /UB Output Floating Time tBHZ ― 10 ― 10 ns Address Transition Time*1 tAX ― 15 ― 15 ns *1: Same parameters with the Write cycle. |
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