DS501-00024-6v1-E

9

MB85R4M2T

(2) Write Cycle

Parameter

Symbol

Value

(VDD=1.8V to 2.7V)

Value

(VDD=2.7V to 3.6V)

Unit

Min

Max

Min

Max

Write Cycle Time

tWC

185

―

150

―

ns

/CE Active Time

tCA

95

―

75

―

ns

/CE↓ to /WE↑ Time

tCW

95

―

75

―

ns

Pre-charge Time

tPC

90

―

75

―

ns

Write Pulse Width

tWP

20

―

20

―

ns

Address Setup Time

tAS

0

―

0

―

ns

Address Hold Time

tAH

95

―

75

―

ns

/WE↓ to /CE↑ Time

tWLC

20

―

20

―

ns

Address Transition to /WE↑ Time

tAWH

185

―

150

―

ns

/WE↑ to Address Transition Time

tWHA

0

―

0

―

ns

/LB, /UB Setup Time

tBS

2

―

2

―

ns

/LB, /UB Hold Time

tBH

0

―

0

―

ns

Data Setup Time

tDS

10

―

10

―

ns

Data Hold Time

tDH

0

―

0

―

ns

/WE Output Floating Time

tWZ

―

10

―

10

ns

/WE Output Access Time*1

tWX

10

―

10

―

ns

Write Setup Time*1

tWS

0

―

0

―

ns

Write Hold Time*1

tWH

0

―

0

―

ns

*1: Writing operation applies “Write Cycle Timing 1” or “Write Cycle Timing 2” by the relation of /CE and

/WE timing. The values of tWX, tWS and tWH are defined by these operations. The conditions of tWS and

tWH are not checked at shipping test.

(3) Power ON/OFF Sequence and Sleep Mode Cycle

Parameter

Symbol

Value

Unit

Min

Max

/CE level hold time for Power ON

tPU

450

―

μs

/CE level hold time for Power OFF

tPD

85

―

ns

Power supply rising time

tVR

50

―

μs/V

Power supply falling time

tVF

100

―

μs/V

/ZZ active time

tZZL

1

―

μs

Sleep mode enable time

tZZEN

―

0

μs

/CE level hold time for Sleep mode release

tZZEX

450

―

μs