DS501-00024-6v1-E

7

MB85R4M2T



ELECTRICAL CHARACTERISTICS

1. DC Characteristics

(within recommended operating conditions)

Parameter

Symbol

Condition

Value

Unit

Min

Typ

Max

Input Leakage

Current

|ILI|

VIN = 0V to VDD

―

―

5

μA

Output Leakage

Current

|ILO|

VOUT = 0V to VDD

/CE = VIH or /OE = VIH

―

―

5

μA

Operating Power

Supply Current*1

IDD

/CE = 0.2 V, Iout = 0 mA

―

15

20

mA

Standby Current

ISB

/ZZ ≥ VDD − 0.2V

/CE, /WE, /OE ≥ VDD − 0.2V

/LB, /UB ≥ VDD − 0.2V

Others ≥ VDD − 0.2V or ≤ 0.2V

―

30

150

μA

Sleep Current

IZZ

/ZZ = VSS

/CE, /WE, /OE ≥ VDD − 0.2V

/LB, /UB ≥ VDD − 0.2V

Others ≥ VDD − 0.2V or ≤ 0.2V

―

5

20

μA

High Level Input

Voltage

VIH

VDD = 1.8V to 3.6V

VDD × 0.8

―

VDD + 0.3

V

Low Level Input

Voltage

VIL

VDD = 1.8V to 3.6V

− 0.3

―

VDD × 0.17

V

High Level

Output Voltage

VOH1

VDD = 2.7V to 3.6V

IOH = − 1.0mA

VDD × 0.8

―

―

V

VOH2

VDD = 1.8V to 2.7V

IOH = − 100μA

VDD − 0.2

―

―

Low Level Output

Voltage

VOL1

VDD = 2.7V to 3.6V

IOL = 2.0mA

―

―

0.4

V

VOL2

VDD = 1.8V to 2.7V

IOL = 150μA

―

―

0.2

*1: During the measurement of IDD, all Address and I/O were taken to only change once per active cycle.

Iout : output current