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IMXRT1160AXEC Datasheet(PDF) 81 Page - NXP Semiconductors |
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IMXRT1160AXEC Datasheet(HTML) 81 Page - NXP Semiconductors |
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81 / 130 page  Electrical characteristics i.MX RT1160 Crossover Processors Data Sheet for Extended Industrial Products, Rev. 4, 06/2025 NXP Semiconductors 81 11 Gain error is FSE-ZSE (same as FSE-EO). 12 Error measured at full scale at 3.6 V. 13 Offset error is same as ZSE, error measured at 0 V with zero scale. Table 77. ADC electrical specifications (1 V ≤ VREFH < 1.71 V and VADINmax ≤ VREFH)1 1 Values in this table are based on test with limited matrix samples in lab environment. Symbol Description Min Typ2 2 Typical values assume Temp = 25 °C and fACLK = Max, unless otherwise stated. Typical values are for reference only, and are not tested in production. Max Unit Notes VADIN Input voltage VREFL — VREFH V — CADIN Input capacitance — 4.5 — pF — RADIN Input resistance — 500 — — RAS Analog source resistance — — 5 K 3 3 This resistance is external to the SoC. To achieve the best results, the analog source resistance must be kept as low as possible. The results in this data sheet were derived from a system that had < 15 Ω analog source resistance. fADCK ADC conversion clock frequency 8 — 88 MHz — Csample Sample cycles 3.5 — 131.5 Cycles 4 Ccompare Fixed compare cycles — 17.5 — Cycles — Cconversion Conversion cycles Cconversion = Csample + Ccompare Cycles — DNL Differential nonlinearity — ±0.7 ±1 LSB 5,6,7 INL Integral nonlinearity — ±0.8 ±1 LSB 5,6,7 ENOB Effective number of bits 8,9,10 Single-ended mode Avg = 1 10.0 10.3 — — Avg = 2 10.4 10.6 — — Avg = 16 11.2 11.3 — — Differential mode Avg = 1 11.0 11.2 — — Avg = 2 — — — — Avg = 16 — — — — SINAD Signal to noise plus distortion SINAD = 6.02 x ENOB + 1.76 dB — EG Gain error11 — -0.16 -0.56 %FSV 12 EO Offset error — ±0.01 ±0.02 %FSV 13 lin_ext_leak External channel leakage current — 30 500 nA — EIL Input leakage error RAS * lin_ext_leak mV — tADCSTUP Setup time — 5 — s — |
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