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RZ/A1M Datasheet(PDF) 76 Page - Renesas Technology Corp |
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RZ/A1M Datasheet(HTML) 76 Page - Renesas Technology Corp |
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76 / 137 page ![]() R01DS0479EJ0100 Rev.1.00 Page 76 of 137 Dec. 25, 2024 RZ/A1H Group, RZ/A1M Group 3. Electrical Characteristics Figure 3.19 Synchronous DRAM Burst Read Bus Cycle (Four Read Cycles) (Auto Precharge, CAS Latency 2, WTRCD = 0 Cycle, WTRP = 1 Cycle) Notes: 1. An address pin to be connected to pin A10 of SDRAM. 2. The waveform for DACKn and TENDn is when active low is specified. Tc1 Tc2 Td1 Td2 Td3 Td4 Tr Tc3 Tc4 Tde t AD1 t AD1 t CSD1 t AD1 t AD1 t AD1 t AD1 t RWD1 t RWD1 t CSD1 t AD1 t AD1 t AD1 t AD1 t RDH2 t RDS2 CKIO A25 to A0 CSn RD/ WR A12/A11 *1 D31 to D0 t RASD1 t RASD1 RAS Row address READA command READ command Column address (1 to 4) tCASD1 t CASD1 CAS t BSD t BSD (High) BS CKE t DQMD1 tDQMD1 DQMxx tDACD t DACD DACKn TENDn*2 t RDH2 t RDS2 |
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