R5F72115D160FPV datasheet(948/1228 Pages) RENESAS

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Section 21 Flash Memory

Rev. 2.00 May. 08, 2008 Page 924 of 1200

REJ09B0344-0200

21.5.2

User Program Mode

The user MAT can be programmed/erased in user program mode. (The user boot MAT cannot be

programmed/erased.)

Programming/erasing is executed by downloading the program in the microcontroller.

The overview flow is shown in figure 21.9.

High voltage is applied to internal flash memory during the programming/erasing processing.

Therefore, transition to reset must not be executed. Doing so may cause damage or destroy flash

memory. If reset is executed accidentally, the reset signal must be released after the reset input

period, which is longer than the normal 100

μs.

For details on the programming procedure, see the description in section 21.5.2 (2), Programming

Procedure in User Program Mode. For details on the erasing procedure, see the description in

section 21.5.2 (3), Erasing Procedure in User Program Mode.

For the overview of a processing that repeats erasing and programming by downloading the

programming program and the erasing program in separate on-chip ROM areas using FTDAR, see

the description in section 21.5.2 (4), Erasing and Programming Procedure in User Program Mode.

When programming,

program data is prepared

FWE=1 ?

Programming/erasing

procedure program is

transferred to the on-chip

RAM and executed

Yes

Programming/erasing

start

Programming/erasing

end

1. Inputting high level to the FWE pin sets the

FWE bit to 1.

2. Programming/erasing is executed only in

the on-chip RAM. However, if the program data

is in a consecutive area and can be accessed

by the MOV.B instruction of the CPU like

SRAM/ROM, the program data can be in an

external space.

3. After programming/erasing is finished, low level

must be input to the FWE pin for protection.

Figure 21.9 Programming/Erasing Overview Flow

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