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R5F72115D160FPV Datasheet(PDF) 955 Page - Renesas Technology Corp |
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R5F72115D160FPV Datasheet(HTML) 955 Page - Renesas Technology Corp |
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955 / 1228 page ![]() Section 21 Flash Memory Rev. 2.00 May. 08, 2008 Page 931 of 1200 REJ09B0344-0200 (2.12) The return value in the programming program, FPFR (general register R0) is checked. (2.13) Determine whether programming of the necessary data has finished. If more than 256 bytes of data are to be programmed, specify FMPAR and FMPDR in 256- byte units, and repeat steps (2.10) to (2.13). Increment the programming destination address by 256 bytes and update the programming data pointer correctly. If an address which has already been programmed is written to again, not only will a programming error occur, but also flash memory will be damaged. (2.14) After programming finishes, clear FKEY and specify software protection. If this LSI is restarted by a power-on reset immediately after user MAT programming has finished, secure a reset period (period of RES = 0) that is at least as long as the normal 100 μs. |
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