H8SLASH3021 datasheet(518/712 Pages) RENESAS

518 / 712 page

15. ROM

Rev.2.00 Mar. 22, 2007 Page 494 of 684

REJ09B0352-0200

A wait time is necessary after the SWE bit is cleared. For details see table 18-15 in section

18.2.5, Flash Memory Characteristics.

7. Do not use an interrupt during flash memory programming or erasing.

Since programming/erase operations (including emulation by RAM) have priority when a high

level is input to the FWE pin, disable all interrupt requests, including NMI.

8. Do not perform additional programming. Reprogram flash memory after erasing.

With on-board programming, program to 128-byte programming unit blocks one time only.

Program to 128-byte programming unit blocks one time only even in the PROM mode. Erase

all the programming unit blocks before reprogramming.

9. Before programming, check that the chip is correctly mounted in the PROM programmer.

Overcurrent damage to the device can result if the index marks on the PROM programmer

socket, socket adapter, and chip are not correctly aligned.

10. Do not touch the socket adapter or chip during programming. Touching either of these can

cause contact faults and write errors.

11. A wait time of 100

μs or more is necessary when performing a read after a transition to normal

mode from program, erase, or verify mode.

H8/3021 Datasheet(PDF) 518 Page - Renesas Technology Corp