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H8/3021 Datasheet(PDF) 521 Page - Renesas Technology Corp |
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H8/3021 Datasheet(HTML) 521 Page - Renesas Technology Corp |
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521 / 712 page ![]() 15. ROM Rev.2.00 Mar. 22, 2007 Page 497 of 684 REJ09B0352-0200 Flash memory access disabled time (x: Wait time after SWE setting, y: Wait time after SWE clearing)*3 Flash memory reprogammable period (Flash memory program execution and data read, other than verify, are disabled.) φ VCC FWE tOSC1 Min 0 μs tMDS tMDS tMDS tRESW MD2 to MD0 RES SWE bit Mode switching*1 Mode switching*1 Boot mode User mode User mode User program mode User program mode SWE set SWE clear *2 Notes: 1. In transition to the boot mode and transition from the boot mode to another mode, mode switching via RES input is necessary. During this switching period (period during which a low level is input to the RES pin), the state of the address dual port and bus control output signals ( AS, RD, WR) changes. Therefore, do not use these pins as output signals during this switching period. 2. When making a transition from the boot mode to another mode, the mode programming setup time tMDS relative to the RES clear timing is necessary. 3. See section 18.2.5 Flash Memory Characteristics. Figure 15.19 Mode Transition Timing (Example: Boot mode → User mode ↔ User program mode) |
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