H8SLASH3021 datasheet(551/712 Pages) RENESAS

551 / 712 page

18. Electrical Characteristics

Rev.2.00 Mar. 22, 2007 Page 527 of 684

REJ09B0352-0200

Item

Symbol

Min

Typ

Max

Unit

Test

Conditions

Input leakage

current

STBY, NMI,

RES, MD

1, MD0

in|

—

1.0

μA

in = 0.5 to

CC – 0.5 V

Port 7

—

1.0

μA

in = 0.5 to

CC – 0.5 V

Three-state

leakage current

Ports 1, 2, 3, 5,

6, 8 to B

TSI|

—

1.0

μA

in = 0.5 to

CC – 0.5 V

(off state)

RESO

—

10.0

Input pull-up

MOS current

Ports 2 and 5

–I

—

300

μA

in = 0 V

Input

NMI,

RES

—

in = 0 V

capacitance

All input pins

except NMI and

RES

—

f = 1 MHz

a = 25°C

Current

dissipation*

Normal

operation

CC*

—

f = 18 MHz

Sleep mode

—

f = 18 MHz

Standby

—

0.1

μA

a ≤ 50°C

mode*

—

50°C < T

Analog power

supply current

During A/D

conversion

—

1.7

2.8

CC = 5.0 V

Idle

—

0.2

μA

RAM standby voltage

RAM

2.0

—

Notes: 1. If the A/D converter is not used, do not leave the AV

CC and AVSS pins open.

Connect AV

CC to VCC, and connect AVSS to VSS.

2. Current dissipation values are for V

IH min = VCC – 0.5 V and VIL max = 0.5 V with all

output pins unloaded and the on-chip pull-up transistors in the off state.

3. The values are for V

RAM ≤ VCC < 3.6 V, VIH min = VCC × 0.9, and VIL max = 0.3 V.

4. I

CC depends on VCC and f as follows:

CC max = 3.0 (mA) + 0.7 (mA/MHz ⋅ V) × VCC × f (normal operation)

CC max = 3.0 (mA) + 0.5 (mA/MHz ⋅ V) × VCC × f (sleep mode)

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