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H8/3021 Datasheet(PDF) 707 Page - Renesas Technology Corp |
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H8/3021 Datasheet(HTML) 707 Page - Renesas Technology Corp |
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707 / 712 page ![]() Appendix H. Comparison of H8/300H Series Product Specifications Rev.2.00 Mar. 22, 2007 Page 683 of 684 REJ09B0352-0200 H8/3039F H8/3022F Flash memory RAM emulation register configuration RAMCR I/O address: H'FF47 7 — 6 — 5 — 4 — 3 RAMS 2 RAM2 1 RAM1 0 — RAMER I/O address: H'FF47 7 — 6 — 5 — 4 — 3 RAMS 2 RAM2 1 RAM1 0 RAM0 RAM emulation RAM area 1 kbytes (H'FF800 to H'FFBFF) 4 kbytes (H'FE000 to H'FEFFF) Applicable blocks EB0 to EB3 EB0 to EB7 Flash memory programming modes Boot mode bit rate 9,600 bps, 4,800 bps 19,200 bps, 9,600 bps, 4,800bps PROM mode Use of PROM programmer supporting Renesas Technology microcomputer device type with 128-kbyte on-chip flash memory (FZTAT128) Use of PROM programmer supporting Renesas Technology microcomputer device type with 256-kbyte on-chip flash memory (FZTAT256) Oscillation stabilization wait time (with external clock) Arbitrary setting Wait time setting of 0.1 ms or more Electrical characteristics Operating temperature Regular product: –20°C to +75°C Product with wide-range temperature specifications: –40°C to +85°C –20°C to +75°C Standby current Ta ≤ 50°C: 5 μA Ta > 50°C: 20 μA Ta ≤ 50°C: 10 μA Ta > 50°C: 80 μA |
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