H8SLASH3021 datasheet(706/712 Pages) RENESAS

706 / 712 page

Appendix H. Comparison of H8/300H Series Product Specifications

Rev.2.00 Mar. 22, 2007 Page 682 of 684

REJ09B0352-0200

Appendix H Comparison of H8/300H Series

Product Specifications

H.1

Differences between H8/3039F and H8/3022F

Table H.1

Differences between H8/3039F and H8/3022F

H8/3039F

H8/3022F

Operating

range

Operating

power supply

voltage

4.5 V to 5.5 V

3.0 V to 5.5 V

3.0 V to 3.6 V

Operating

frequency

1 MHz to

18 MHz

1 MHz to

10 MHz

2 MHz to 18 MHz

On-chip RAM

4 kbytes

8 kbytes

Flash memory Size

128 kbytes

256 kbytes

Program/erase

voltage

Supplied from V

Programming

unit

32-byte simultaneous

programming

Write pulse application method

= 150

μs × 4 + 500 μs × 399

128-byte simultaneous

programming

Write pulse application method

= 30

μs × 6 + 200 μs × 994

(with 10 µs additional

programming)

Block

configuration

8 blocks

• 1 kbyte × 4

• 28 kbytes × 1

• 32 kbytes × 3

12 blocks

• 4 kbytes × 8

• 32 kbytes × 1

• 64 kbytes × 3

EBR register

configuration

EBR

I/O address: H'FF42

EB7

EB6

EB5

EB4

EB3

EB2

EB1

EB0

EBR1

I/O address: H'FF42

EB7

EB6

EB5

EB4

EB3

EB2

EB1

EB0

EBR2

I/O address: H'FF43

—

EB11

EB10

EB9

EB8

Flash error

FLMSR

I/O address: H'FF4D

FLER

—

FLMCR2

I/O address: H'FF41

FLER

—

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