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STM32W108HB Datasheet(PDF) 170 Page - STMicroelectronics

Part # STM32W108HB
Description  High-performance, IEEE 802.15.4 wireless system-on-chip
PDF  179 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32W108HB Datasheet(HTML) 170 Page - STMicroelectronics

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Electrical characteristics
STM32W108CB, STM32W108HB
170/179
Doc ID 16252 Rev 2
12.7
Non-RF system electrical characteristics
Table 42 lists the non-RF system level characteristics for the STM32W.
Output voltage for logic 0
VOL
(IOL = 4 mA for standard
pads, 8 mA for high current
pads)
0
0.18 x
VDD_PADS
V
Output voltage for logic 1
VOH
(IOH = 4 mA for standard
pads, 8 mA for high current
pads)
0.82 x
VDD_PADS
VDD_PADS
V
Output source current (standard
current pad)
IOHS
4mA
Output sink current (standard
current pad)
IOLS
4mA
Output source current
high current pad: PA6, PA7,
PB6, PB7, PC0
IOHH
8mA
Output sink current
high current pad: PA6, PA7,
PB6, PB7, PC0
IOLH
8mA
Total output current (for I/O
Pads)
IOH + IOL
40
mA
Input voltage threshold for
OSC32A
0.2 x
VDD_PADS
0.8 x
VDD_PADS
V
Input voltage threshold for
OSCA
0.2 x
VDD_PADS
A
0.8 x
VDD_PADS
A
V
Table 41.
Digital I/O specifications (continued)
Parameter
Conditions
Min.
Typ.
Max.
Unit
Table 42.
Non-RF system electrical characteristics
Parameter
Conditions
Min.
Typ.
Max.
Unit
System wake time from deep
sleep
From wakeup event to first
ARM® Cortex-M3 instruction
running from 6MHz internal RC
clock
Includes supply ramp time and
oscillator startup time
100
µs
Shutdown time going into deep
sleep
From last ARM® Cortex-M3
instruction to deep sleep mode
5µs



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