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STM32W108HB Datasheet(PDF) 166 Page - STMicroelectronics |
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STM32W108HB Datasheet(HTML) 166 Page - STMicroelectronics |
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166 / 179 page ![]() Electrical characteristics STM32W108CB, STM32W108HB 166/179 Doc ID 16252 Rev 2 12.5 DC electrical characteristics Table 40. DC electrical characteristics Parameter Conditions Min. Typ. Max. Unit Regulator input voltage (VDD_PADS) 2.1 3.6 V Power supply range (VDD_MEM) Regulator output or external input 1.7 1.8 1.9 V Power supply range (VDD_CORE) Regulator output 1.18 1.25 1.32 V Deep Sleep Current Quiescent current, internal RC oscillator disabled -40°C, VDD_PADS=3.6 V 0.4 µA +25°C, VDD_PADS=3.6 V 0.4 µA +85°C, VDD_PADS=3.6 V 0.6 µA Quiescent current, including internal RC oscillator -40°C, VDD_PADS=3.6 V 0.7 µA +25°C, VDD_PADS=3.6 V 0.8 µA +85°C, VDD_PADS=3.6 V 1.2 µA Quiescent current, including 32.768 kHz oscillator -40°C, VDD_PADS=3.6V 1.2 µA +25°C, VDD_PADS=3.6 V 1.3 µA +85°C, VDD_PADS=3.6 V 1.7 µA Quiescent current, including internal RC oscillator and 32.768 kHz oscillator -40°C, VDD_PADS=3.6V 1.4 µA +25°C, VDD_PADS=3.6V 1.5 µA +85°C, VDD_PADS=3.6 V 2.0 µA Simulated deep sleep (debug mode) current With no debugger activity 200 µA Reset current Quiescent current, NRST asserted Typ at 25°C/3 V Max at 85°C/3.6 V 1.2 mA Processor and peripheral currents ARM® Cortex-M3, RAM, and flash memory 25 °C, 1.8 V memory and 1.25 V core ARM® Cortex-M3 running at 12 MHz from crystal oscillator Radio and all peripherals off 8.0 mA ARM® Cortex-M3, RAM, and flash memory 25 °C, 1.8 V memory and 1.25 V core ARM® Cortex-M3 running at 24 MHz from crystal oscillator Radio and all peripherals off 9.0 mA |
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