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STM32W108HB Datasheet(PDF) 162 Page - STMicroelectronics |
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STM32W108HB Datasheet(HTML) 162 Page - STMicroelectronics |
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162 / 179 page ![]() Electrical characteristics STM32W108CB, STM32W108HB 162/179 Doc ID 16252 Rev 2 12.4.3 Low frequency internal clock characteristics 12.4.4 Low frequency external clock characteristics 12.4.5 ADC characteristics Table 37 describes the key ADC parameters measured at 25°C and VDD_PADS at 3.0 V, for a sampling clock of 1 MHz. ADC_HVSELP and ADC_HVSELN are programmed to 0 to disable the input buffer. The single-ended measurements were done at finput = 7.7% fNyquist; 0 dBFS level (where full-scale is a 1.2 V p-p swing). The differential measurements were done at finput = 7.7% fNyquist; -6 dBFS level (where full-scale is a 2.4 V p-p swing). Table 35. Low-frequency RC oscillator specification Parameter Test conditions Min Typ Max Unit Nominal Frequency After trimming 9 10 11 kHz Analog trim step size 1 kHz Supply dependence For a voltage drop from 3.6 V to 3.1 V or 2.6 V to 2.1 V (without re-calibration) 1% Frequency dependence Frequency variation with temperature for a change from -40 oC to +85oC (without re-calibration) 2% Table 36. Low-frequency crystal oscillator specification Parameter Test conditions Min Typ Max Unit Frequency 32.768 kHz Accuracy Initial, temperature, and ageing -100 +100 ppm Load cap xin 27 pF Load cap xout 18 pF Crystal ESR 100 k Ω Start-up time 2 s Current consumption At 25°C, VDD_PADS=3.0 V 0.5 µA Table 37. ADC module key parameters for 1 MHz sampling Parameter Performance ADC_PERIOD 0 1 2 3 4 5 6 7 Conversion Time (µs) 32 64 128 256 512 1024 2048 4096 Nyquist Freq (kHz) 15.6 7.81 3.91 1.95 0.977 0.488 0.244 0.122 3 dB Cut-off (kHz) 9.42 4.71 2.36 1.18 0.589 0.294 0.147 0.0736 INL (codes peak) 0.04 0.04 0.05 0.09 0.2 0.3 0.6 1.2 INL (codes RMS) 0.02 0.02 0.02 0.03 0.05 0.1 0.2 0.4 |
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