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STM32W108HB Datasheet(PDF) 158 Page - STMicroelectronics |
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STM32W108HB Datasheet(HTML) 158 Page - STMicroelectronics |
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158 / 179 page ![]() Electrical characteristics STM32W108CB, STM32W108HB 158/179 Doc ID 16252 Rev 2 12.3 Operating conditions 12.3.1 General operating conditions Table 26. General operating conditions Symbol Parameter Conditions Min. Typ. Max. Unit – Regulator input voltage (VDD_PADS) 2.1 3.6 V – Analog and memory input voltage (VDD_24MHZ, VDD_VCO, VDD_RF, VDD_IF, VDD_PADSA, VDD_MEM, VDD_PRE, VDD_SYNTH) 1.7 1.8 1.9 V – Core input voltage (VDD_CORE) 1.18 1.25 1.32 V – Operating temperature range -40 +85 °C fHCLK Internal AHB clock frequency 0 72 MHz fPCLK1 Internal APB1 clock frequency 0 36 fPCLK2 Internal APB2 clock frequency 0 72 VDD Standard operating voltage 2 3.6 V VDDA Analog operating voltage (ADC not used) Must be the same potential as VDD 23.6 V Analog operating voltage (ADC used) 2.4 3.6 VBAT Backup operating voltage 1.8 3.6 V TA Ambient temperature for 6 suffix version Maximum power dissipation –40 85 °C Low power dissipation –40 105 Ambient temperature for 7 suffix version Maximum power dissipation –40 105 °C Low power dissipation –40 125 TJ Junction temperature range 6 suffix version –40 105 °C 7 suffix version –40 125 |
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