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MF1S5009DA4 Datasheet(PDF) 25 Page - NXP Semiconductors

Part # MF1S5009DA4
Description  Mainstream contactless smart card IC for fast and easy solution development
PDF  32 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MF1S5009DA4 Datasheet(HTML) 25 Page - NXP Semiconductors

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MF1S5009
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3 — 27 July 2010
189131
25 of 32
NXP Semiconductors
MF1S5009
Mainstream contactless smart card IC
12. Limiting values
[1]
Stresses above one or more of the limiting values may cause permanent damage to the device
[2]
Exposure to limiting values for extended periods may affect device reliability
[3]
MIL Standard 883-C method 3015; Human body model: C = 100 pF, R = 1.5 k
Ω
13. Characteristics
[1]
Stresses above one or more of the values may cause permanent damage to the device.
[2]
Exposure to limiting values for extended periods may affect device reliability.
[3]
LCR meter, Tamb = 22 °C, fi = 13.56 MHz, 2.8 V RMS.
Table 20.
MIFARE Transfer command
Name
Code
Description
Length
Cmd
B0h
Write value into destination block
1 byte
Addr
-
MIFARE destination block address
(00h to FFh)
1 byte
CRC
-
CRC according to Ref. 4
2 bytes
NAK
see Table 9
see Section 10.3
4-bit
Table 21.
MIFARE Transfer timing
These times exclude the end of communication of the PCD.
TACK min
TACK max
TNAK min
TNAK max
TTimeOut
Transfer
71
μsT
TimeOut
71
μsT
TimeOut
10 ms
Table 22.
Limiting values [1][2]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Min
Max
Unit
II
input current
-
30
mA
Ptot/pack
total power dissipation per package
-
200
mW
Tstg
storage temperature
−55
+125
°C
Tamb
ambient temperature
−25
+70
°C
VESD
electrostatic discharge voltage
[3]
2-
kV
Ilu
latch-up current
±100
-
mA
Table 23.
Characteristics [1][2]
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Ci
input capacitance
[3]
15.0
17.0
19.0
pF
fi
input frequency
-
13.56
-
MHz
EEPROM characteristics
tret
retention time
Tamb = 22 °C
10
-
-
year
Nendu(W)
write endurance
Tamb = 22 °C
100000
200000
-
cycle



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