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MF1S5009DA4 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # MF1S5009DA4
Description  Mainstream contactless smart card IC for fast and easy solution development
PDF  32 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

MF1S5009DA4 Datasheet(HTML) 5 Page - NXP Semiconductors

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MF1S5009
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3 — 27 July 2010
189131
5 of 32
NXP Semiconductors
MF1S5009
Mainstream contactless smart card IC
[1]
The gap between chips may vary due to changing foil expansion.
[2]
Pads P1, TP2 and VSS are disconnected when wafer is sawn.
7.1 Fail die identification
Electronic wafer mapping covers the electrical test results and additionally the results of
mechanical/visual inspection.
No ink dots are applied.
gap between chips[1]
typical = 15
μm
minimum = 5
μm
Passivation
type
sandwich structure
material
nitride
thickness
1.75
μm
Au bump (substrate connected to VSS)
material
> 99.9 % pure Au
hardness
35 to 80 HV 0.005
shear strength
>70 MPa
height
18
μm
height uniformity
within a die =
±2 μm
within a wafer =
±3 μm
wafer to wafer =
±4 μm
flatness
minimum =
±1.5 μm
size
LA, LB = 69
μm × 69 μm
P1;TP2;VSS[2] =58 μm × 58 μm
size variation
±5 μm
under bump metallization
sputtered TiW
Table 3.
Specifications



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