MPC5673F datasheet(25/132 Pages) FREESCALE

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Electrical Characteristics

MPC5674F Microcontroller Data Sheet, Rev. 6

Freescale Semiconductor

VRE_TEM

Radiated emissions,

electric field and

magnetic field

VDD = 1.2 V

VDDE = 3.3 V

VDDEH = 5 V

TA = 25 °C

416 BGA

EBI off

CLK off

FM on4

40 MHz crystal

264 MHz

(fEBI_CAL =66

MHz)

0.15–50

μV

50–150

150–500

500–1000

IEC and SAE level

—

1,3

1 Determined according to IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband TEM

Cell Method, and SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband

TEM (GTEM) Cell Method.

2 I = 36 dB

μV

3 Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband

TEM Cell Method, and Appendix D of SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated

Circuits—TEM/Wideband TEM (GTEM) Cell Method.

4 “FM on” = FM depth of ±2%

5 K = 30 dB

μV

Table 8. EMC Radiated Emissions Operating Behaviors: 516 BGA

Symbol

Description

Conditions

fOSC

fSYS

Frequency

band (MHz)

Level

(max.)

Unit Notes

VRE_TEM

Radiated emissions,

electric field and

magnetic field

VDD = 1.2 V

VDDE = 3.3 V

VDDEH = 5 V

TA = 25 °C

516 BGA

EBI on

CLK on

FM off

40 MHz crystal

264 MHz

(fEBI_CAL =66

MHz)

0.15–50

μV

1 Determined according to IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband TEM

Cell Method, and SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated Circuits—TEM/Wideband

TEM (GTEM) Cell Method.

50–150

150–500

500–1000

IEC and SAE level

2 G = 48 dB

μV

—

1, 3

3 Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband

TEM Cell Method, and Appendix D of SAE Standard J1752-3, Measurement of Radiated Emissions from Integrated

Circuits—TEM/Wideband TEM (GTEM) Cell Method.

VRE_TEM

Radiated emissions,

electric field and

magnetic field

VDD = 1.2 V

VDDE = 3.3 V

VDDEH = 5 V

TA = 25 °C

516 BGA

EBI on

CLK on

FM on4

4 “FM on” = FM depth of ±2%

40 MHz crystal

264 MHz

(fEBI_CAL =66

MHz)

0.15–50

μV

50–150

150–500

500–1000

IEC and SAE level

—

1, 3

Table 7. EMC Radiated Emissions Operating Behaviors: 416 BGA (continued)

Symbol

Description

Conditions

fOSC

fSYS

Frequency

band (MHz)

Level

(max.)

Unit Notes

MPC5673F Datasheet(PDF) 25 Page - Freescale Semiconductor, Inc

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