CY8C20121 datasheet(28/43 Pages) CYPRESS

28 / 43 page

CY8C20111, CY8C20121

Document Number: 001-53516 Rev. *G

Page 28 of 43

12. Electrical Specifications

13. DC Electrical Characteristics

12.1 Absolute Maximum Ratings

Parameter

Description

Min

Typ

Max

Unit

Notes

TSTG

Storage temperature

–55

+100

°C

Higher storage temperatures reduce data

retention time. Recommended storage

temperature is +25 °C ± 25 °C (0 °C to

50 °C). Extended duration storage tempera-

tures above 65 °C degrade reliability

TBAKETEMP Bake Temperature

–

125

See

Package

label

°C

tBAKETIME

Bake Time

See

package

label

–

Hours

Ambient temperature with power

applied

–40

–

+85

°C

VDD

Supply voltage on VDD relative to VSS

–0.5

–

+6.0

VIO

DC input voltage

VSS – 0.5

–

VDD + 0.5

VIOZ

DC voltage applied to tri-state

VSS – 0.5

–

VDD + 0.5

IMIO

Maximum current into any GPIO pin

–25

–

+50

ESD

Electro static discharge voltage

2000

–

Human body model ESD

Latch up current

–

200

12.2 Operating Temperature

Parameter

Description

Min

Typ

Max

Unit

Notes

Ambient temperature

–40

–

+85

°C

Junction temperature

–40

–

+100

°C

13.1 DC Chip Level Specifications

Parameter

Description

Min

Typ

Max

Unit

Notes

VDD

Supply voltage

2.40

–

5.25

IDD

Supply current

–

1.5

2.5

Conditions are VDD = 3.10 V, TA = 25 °C

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