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STM8L151C8T6 Datasheet(PDF) 91 Page - STMicroelectronics |
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STM8L151C8T6 Datasheet(HTML) 91 Page - STMicroelectronics |
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91 / 129 page ![]() STM8L15xx8, STM8L15xR6 Electrical parameters Doc ID 17943 Rev 5 91/129 Figure 23. Typical HSI frequency vs. VDD Low speed internal RC oscillator (LSI) In the following table, data are based on characterization results, not tested in production. Table 34. LSI oscillator characteristics Symbol Parameter Conditions(1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Min. Typ. Max. Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time 200(2) 2. Guaranteed by Design, not tested in production. µs D(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -12 11 % |
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