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AN2784 Datasheet(PDF) 24 Page - STMicroelectronics

Part # AN2784
Description  Using the high-density STM32F10xxx FSMC peripheral to drive external memories
PDF  31 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2784 Datasheet(HTML) 24 Page - STMicroelectronics

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Interfacing with an 8-bit NAND Flash memory
AN2784
24/31
Doc ID 14779 Rev 4
Based on the NAND Flash memory access timings shown in Figure 4, the following
equations are found:
●
The write or read access time is the time between the falling edge and the rising edge
of the NAND Flash memory Chip Select signal. It is computed as a function of the
FSMC timing parameter:
((SET + 1) + (WAIT + 1) + (HOLD + 1)) × tHCLK Write/Read access
●
The Wait time is measured between the falling edge and the rising edge of the
Write/Read Enable signal:
Write/Read Enable signal low to high = (WAIT + 1) × tHCLK
●
For write access, the HIZ parameter is the time measured between the falling edge of
the Chip Select signal and the data setup on bus:
(HIZ+1) x tHCLK Chip Select setup time to Data setup.
●
The HOLD timing is given in the NAND datasheet as follows:
(HOLD +1) x tHCLK = Write Enable High to Chip Enable / Address/Command Latch
High
To make sure of the correct timing configuration of the FSMC, the timings have to take into
consideration:
●
The maximum read/write access time
●
The different internal FSMC delays
●
The different internal memory delays
Hence, we have the following equations following the NAND512W3A NAND datasheet:
●
(SET + 1) x tHCLK max (tCS, tCLS, tALS, tCLR, tAR) - tWP
●
(WAIT + 1) x tHCLK max (tWP,tRP)
●
(HIZ + 1) x tHCLK max(tCS, tALS, tCLS) + (tWP - tDS)
●
(HOLD + 1) x tHCLK max (tCH, tCLH, tALH)
●
((WAIT + 1) + ( HOLD + 1) + (SET + 1)) x tHCLK max (tWC/RC)
Considering the different timings in the FSMC and the memory, the equations become:
●
WAIT must verify:
(WAIT + 1)× tHCLK (tREA + tsu(D-NOE))
WAIT
(t
REA + tsu(D-NOE)) /tHCLK - 1
Note:
tsu(D-NOE) is specified in the STM32F10xCDE datasheet.
tsu(D-NOE) = 25 ns
Table 7 gives the meanings and values of the NAND512W3A2C memory parameters.
Table 7.
NAND512W3A2C Flash memory timings
Symbol
Parameter
Value
Unit
tCEA
Chip Enable low to output valid
35
ns
tWP
Write Enable low to Write Enable high
15
ns



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