DS90C3202

SNLS191D – APRIL 2005 – REVISED APRIL 2013

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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1)

−0.3V to +4V

LVCMOS/LVTTL Input Voltage

LVCMOS/LVTTL Output Voltage

LVDS Receiver Input Voltage

Junction Temperature

+150°C

Storage Temperature

−65°C to +150°C

Lead Temperature

(Soldering, 10 seconds)

+260°C

Maximum Package Power Dissipation Capacity at 25°C

128 TQFP Package

1.4W

Package Derating

25.6mW/°C above +25°C

ESD Rating:

HBM, 1.5k

Ω, 100pF

> 2 kV

EIAJ, 0

Ω, 200pF

> 200 V

(1)

“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be ensured. They are not meant to imply

that the device should be operated at these limits. The tables of “Electrical Characteristics” specify conditions for device operation.

Recommended Operating Conditions

Min

Nom

Max

Unit

3.15

3.3

3.6

V

Operating Free Air

0

+25

+70

°C

±100

Receiver Input Range

0

V

Input Clock Frequency (f)

8

135

MHz

4

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