| Electronic Components Datasheet Search |
|
STL4N10F7 Datasheet(PDF) 7 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STL4N10F7 Datasheet(HTML) 7 Page - STMicroelectronics |
|
7 / 14 page ![]() DocID023898 Rev 4 7/14 STL4N10F7 Electrical characteristics 14 Figure 8. Capacitance variations Figure 9. Normalized V(BR)DSS vs temperature Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics C 400 300 200 100 0 40 VDS(V) (pF) 20 500 60 Ciss Coss Crss 80 0 GIPG200120141330FSR V(BR)DSS 1.0 0.98 0.96 -75 TJ(°C) (norm) -25 75 25 125 1.02 1.04 ID= 250 µA GIPG210120141040FSR VGS(th) 0.8 0.7 0.6 -75 TJ(°C) (norm) -25 1.1 75 25 125 0.9 1 ID=250 µA VDS=VGS GIPG210120141021FSR RDS(on) 1.3 0.9 0.5 -75 TJ(°C) (norm) -25 75 25 125 1.7 VGS=10 V ID=2.25 A GIPG210120141030FSR VSD 0.5 1.5 ISD(A) (V) 1 2 2.5 0.4 0.6 0.8 TJ=-55°C TJ=175°C TJ=25°C 1.0 1.2 GIPG210120141051FSR |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |