STL4N10F7 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STL4N10F7

4/14

DocID023898 Rev 4

Electrical characteristics

CASE

=25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(BR)DSS

Drain-source breakdown

voltage

= 250 μA, V

= 0

100

DSS

Zero gate voltage drain

current (V

= 0)

= 100 V

μA

= 100 V, T

= 125 °C

100

μA

GSS

Gate body leakage current

= 0)

= + 20 V

100

GS(th)

Gate threshold voltage

= V

, I

= 250 μA

2.5

4.5

DS(on)

Static drain-source on-

resistance

= 10 V, I

= 2.25 A

0.062

0.07

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

iss

Input capacitance

=50 V, f=1 MHz,

-408

oss

Output capacitance

112

rss

Reverse transfer

capacitance

-10

Total gate charge

=50 V, I

= 4.5 A

=10 V

(see Figure 14)

-7.8

Gate-source charge

Gate-drain charge

1.7

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

d(on)

Turn-on delay time

=50 V, I

= 2.25 A,

=4.7

Ω, V

= 10 V

(see Figure 13)

-6.3

Rise time

d(off)

Turn-off delay time

Fall time

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