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STL4N10F7 Datasheet(PDF) 3 Page - STMicroelectronics |
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STL4N10F7 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() DocID023898 Rev 4 3/14 STL4N10F7 Electrical ratings 14 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = 0) 100 V V GS Gate-source voltage ± 20 V I D (1) 1. The value is rated according R thj-amb Drain current (continuous) at T amb = 25 °C 4.5 A I D (1) Drain current (continuous) at T amb =100 °C 3.2 A I DM (1)(2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 18 A I D (3) 3. This value is rated according to R thj-case Drain current (continuous) at T c = 25 °C 18 A I D (3) Drain current (continuous) at T c = 100 °C 11.25 A I DM (2)(3) Drain current (pulsed) 72 A P TOT (3) Total dissipation at T C = 25 °C 50 W P TOT (1) Total dissipation at T amb = 25 °C 2.9 W T J Operating junction temperature -55 to 150 °C T stg Storage temperature °C Table 3. Thermal resistance Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 2.50 °C/W R thj-amb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec Thermal resistance junction-amb 42.8 °C/W R thj-amb (2) 2. When mounted on FR-4 board of 1inch², 2oz Cu, steady state Thermal resistance junction-amb 63.5 °C/W |
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